Atomistic Models for Nanotube Device Electrostatics
نویسندگان
چکیده
A quantum capacitance is calculated for a single wall carbon nan otube in a eld e ect device The calculation is performed on a base of a continuum model taking into account full microscopics A general ex pression for the atomistic capacitance of a nanotube of arbitrary shape is derived The result is useful for modeling of electromechanical action of a nanotube device and for nanotube electronics simulation
منابع مشابه
Influence of vacancies on metallic nanotube transport properties
The electronic behavior of metallic carbon nanotubes under the influence of atomistic vacancy defects present in the channel is theoretically investigated using non-equilibrium Green’s function method self-consistently coupled with three-dimensional electrostatics. A nearest neighbor tight binding model based on a single pz orbital is used for the device Hamiltonian. A single vacancy defect in ...
متن کاملTheory of Nanotube Nanodevices
The paper reviews quantum and classical effects which arise in physics of nanotube devices. Knowledge of nanotube electronic structure has been used for a calculation of quantum capacitance and quantum terms in van der Waals energy. Combining analytical theory and quantum mechanical micromodels I worked out a description for nanoelectromechanical devices, for example, electromechanical switch. ...
متن کاملNanotube MEMS: Modeling extreme nanoscale devices
The physics of operation of nanotube NEMS devices is reviewed. Special attention is paid to non-classical effects, rarely described in MEMS analysis, such as van der Waals/Casimir interactions, quantum effects in electrostatics, atomistic parameterization of elasticity. As an example of a breakdown of a classical MEMS theory, the NEMS scaling limitation is derived in a lump model taking into ac...
متن کاملTowards Multi-Scale Modeling of Carbon Nanotube Transistors
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube electronics. We focus in this paper on one element of that hierarchy, the simulation of ballistic CNT...
متن کاملDesign and Analysis of Nanotube-Based Memory Cells
In this paper, we proposed a nanoelectromechanical design as memory cells. A simple design contains a double-walled nanotube-based oscillator. Atomistic materials are deposed on the outer nanotube as electrodes. Once the WRITE voltages are applied on electrodes, the induced electromagnetic force can overcome the interlayer friction between the inner and outer tubes so that the oscillator can pr...
متن کامل